Semiconductor memory device

ABSTRACT

A semiconductor memory device includes a memory cell array including a plurality of blocks each including a memory cell unit, and a selection transistor which selects the memory cell unit, and a row decoder including a first block selector and a second block selector each of which includes a plurality of transfer transistors which are formed to correspond to the plurality of blocks and arranged adjacent to each other in a word-line direction wherein the diffusion layers are formed to oppose each other in the first block selector and the second block selector, and a width between the diffusion layers of the first block selector and the second block selector adjacent to each other in the word-line direction is made larger than a width between the diffusion layers in each of the first block selector and the second block selector adjacent to each other in the word-line direction.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a continuation application based on U.S. applicationSer. No. 12/329,007, filed Dec. 5, 2008 and is based upon and claims thebenefit of priority from prior Japanese Patent Application No.2007-318851, filed Dec. 10, 2007, the entire contents of which areincorporated herein by reference.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a semiconductor memory device.

2. Description of the Related Art

Recently, many electronic apparatuses incorporating NAND flash memoriesare commercially available. As the number of functions of theseelectronic apparatuses increases, it has become necessary to furtherincrease the storage capacities of the NAND flash memories.

Unfortunately, while the distance between interconnections is shortenedby the progress of micropatterning resulting from the increase incapacity, the voltage relationship between the interconnections remainsunchanged from that of the preceding generation. Consequently, a leakagecurrent in a row decoder placed near a memory cell array causes memorycell erase errors, and increases the number of defective bits.

In a data erase operation of the NAND flash memory, for example, a wordline of an unselected block is set to float and boosted to an erasevoltage by coupling with the well voltage (CPWELL) (e.g., Jpn. Pat.Appln. KOKAI Publication No. 2005-191413).

In this state, a leakage current caused by a transfer transistor isgenerated in a block selector in a row decoder connected to the wordline of the unselected block. In a memory cell of the unselected block,therefore, the electric charge of the word line boosted by coupling isremoved by the leakage current, so the potential of the word linebecomes lower than the erase voltage. For example, if the word linevoltage drops from the erase voltage (about 20 V) to about 15 V, apotential difference of about 5 V is produced between the controlelectrode (CG) of the memory cell connected to the word line and thewell (p-well). Since this produces a weak erased state, electrons areremoved from the floating electrode (FG) of a memory cell in which datais to be held. This causes an erase error and increases the number ofdefective bits.

Major leakage currents caused by the transfer transistor described aboveduring an erase operation are two leakage currents leak1 and leak2below.

The leakage current leak1 is a leakage current between diffusion layers,which oppose each other and to which 0 V is applied, of transfertransistors in selected blocks adjacent to each other in the bit-linedirection (channel-length direction).

The leakage current leak2 is a leakage current between diffusion layers,which obliquely oppose each other and to which 0 V is applied, oftransfer transistors in similar selected blocks adjacent to each otherin the bit-line direction.

As described above, the leakage currents leak1 and leak2 must be reducedin order to reduce erase defects.

BRIEF SUMMARY OF THE INVENTION

A semiconductor memory device according to an aspect of the presentinvention comprising a memory cell array including a plurality of blockseach including a memory cell unit in which current paths of a pluralityof memory cells arranged in a matrix at intersections of a plurality ofbit lines and a plurality of word lines are connected in series, and aselection transistor which selects the memory cell unit; and a rowdecoder including a first block selector and a second block selectoreach of which includes a plurality of transfer transistors havingcurrent paths whose ends are electrically connected to the plurality ofword lines, and which are formed to correspond to the plurality ofblocks and arranged adjacent to each other in a word-line direction,wherein diffusion layers as the ends of the current paths of thetransfer transistors are formed to oppose each other in the first blockselector and the second block selector, and a width between thediffusion layers of the first block selector and the second blockselector adjacent to each other in the word-line direction is madelarger than a width between the diffusion layers in each of the firstblock selector and the second block selector adjacent to each other inthe word-line direction.

A semiconductor memory device according to another aspect of the presentinvention comprising a memory cell array including a plurality of blockseach including a memory cell unit in which current paths of a pluralityof memory cells arranged in a matrix at intersections of a plurality ofbit lines and a plurality of word lines are connected in series, and aselection transistor which selects the memory cell unit; and a rowdecoder including a first block selector and a second block selectoreach of which includes a plurality of transfer transistors havingcurrent paths whose ends are electrically connected to the plurality ofword lines, and which are formed to correspond to the plurality ofblocks and arranged adjacent to each other in a word-line direction,wherein diffusion layers as the ends of the current paths of thetransfer transistors are formed to oppose each other in the first blockselector and the second block selector, a width between the diffusionlayers of the first block selector and the second block selectoradjacent to each other in the word-line direction is made larger than awidth between the diffusion layers in each of the first block selectorand the second block selector adjacent to each other in the word-linedirection, and the first block selector and the second block selectorare staggered by shifting pitches in a bit-line direction.

BRIEF DESCRIPTION OF THE SEVERAL VIEWS OF THE DRAWING

FIG. 1 is a plan view for explaining a nonvolatile semiconductor deviceaccording to an outline of the present invention;

FIG. 2 is a block diagram showing an example of the overall arrangementof a nonvolatile semiconductor device according to the first embodimentof the present invention;

FIG. 3 is a block diagram showing a memory cell array unit of thenonvolatile semiconductor device according to the first embodiment;

FIG. 4 is a block diagram showing the memory cell array unit of thenonvolatile semiconductor device according to the first embodiment;

FIG. 5 is a block diagram showing the memory cell array unit of thenonvolatile semiconductor device according to the first embodiment;

FIG. 6 is a block diagram showing the memory cell array unit of thenonvolatile semiconductor device according to the first embodiment;

FIG. 7 is a block diagram showing a memory cell array of the nonvolatilesemiconductor device according to the first embodiment;

FIG. 8 is a block diagram showing the memory cell array of thenonvolatile semiconductor device according to the first embodiment;

FIG. 9 is a block diagram showing the memory cell array unit of thenonvolatile semiconductor device according to the first embodiment;

FIG. 10 is an equivalent circuit diagram showing a block and blockselector according to the first embodiment;

FIG. 11 is a plan view showing a row decoder of the nonvolatilesemiconductor device according to the first embodiment;

FIG. 12 is a sectional view taken along a line XII-XII in FIG. 11;

FIG. 13 is an equivalent circuit diagram showing a selected block andblock selector according to the first embodiment when erasing data;

FIG. 14 is an equivalent circuit diagram showing an unselected block andblock selector according to the first embodiment when erasing data;

FIG. 15 is a plan view showing the voltage relationship in the rowdecoder according to the first embodiment when erasing data;

FIG. 16 is a sectional view showing the voltage relationship in anunselected block according to the first embodiment when erasing data;

FIG. 17 is a graph showing the operating waveforms of the well voltageand word-line voltage when erasing data in the nonvolatile semiconductordevice according to the first embodiment;

FIG. 18 is a sectional view showing the voltage relationship in a memorycell of an unselected block according to the first embodiment whenerasing data;

FIG. 19 is a sectional view showing the voltage relationship in a memorycell of a selected block according to the first embodiment when erasingdata;

FIG. 20 is a block diagram showing a memory cell array unit of anonvolatile semiconductor device according to the second embodiment ofthe present invention;

FIG. 21 is a plan view showing a row decoder of the nonvolatilesemiconductor device according to the second embodiment;

FIG. 22 is a plan view showing the voltage relationship in the rowdecoder according to the second embodiment when erasing data;

FIG. 23 is a plan view showing a memory cell array unit of a nonvolatilesemiconductor device according to a comparative example of the presentinvention;

FIG. 24 is a plan view showing a row decoder of the nonvolatilesemiconductor device according to the comparative example;

FIG. 25 is a plan view showing the voltage relationship in the rowdecoder according to the comparative example when erasing data;

FIG. 26 is a sectional view taken along a line XXVI-XXVI in FIG. 25;

FIG. 27 is a graph showing the operating waveforms of the well voltageand word-line voltage when erasing data in the nonvolatile semiconductordevice according to the comparative example; and

FIG. 28 is a sectional view showing the voltage relationship in a memorycell of an unselected block according to the comparative example whenerasing data.

DETAILED DESCRIPTION OF THE INVENTION

[Outline]

First, an outline of the present invention will be explained below withreference to FIG. 1.

An example of the present invention proposes a semiconductor memorydevice capable of reducing leakage currents in a row decoder andadvantageous in preventing an erase error in a memory cell.

FIG. 1 shows an example of the arrangement of this semiconductor memorydevice.

That is, the semiconductor memory device comprises a memory cell array(not shown) and row decoder 22. The memory cell array includes aplurality of blocks each having a memory cell unit and a selectiontransistor for selecting the memory cell unit. In the memory cell unit,the current paths of a plurality of memory cells arranged in a matrix atthe intersections of a plurality of bit lines and a plurality of wordlines are connected in series. The row decoder 22 includes first andsecond block selectors (RDn and RDn+3) arranged adjacent to each otherin the word-line direction. The first and second block selectors eachhave a plurality of transfer transistors (TR), and are formed tocorrespond to the plurality of blocks. One end of the current path ofeach transfer transistor is electrically connected to a correspondingone of the plurality of word lines.

Diffusion layers (S) as the ends of the current paths of the transfertransistors (TR) are arranged to oppose each other in each of the firstand second block selectors.

The width (W2) between the diffusion layers of the first and secondblock selectors adjacent to each other in the word-line direction ismade larger than the width (W1) between the diffusion layers in each ofthe first and second block selectors adjacent to each other in theword-line direction (widths: W2>W1).

First, as described above, the diffusion layers (S) as the ends of thecurrent paths of the transfer transistors (TR) are arranged to opposeeach other in each of the first and second block selectors. In otherwords, the sources S of the diffusion layers connected to word lines WLare arranged to oppose each other in the same block selector. In thefirst block selector RDn, for example, the sources S as the diffusionlayers of transfer transistors TR0 _(—) n to TRi_n are arranged tooppose each other in the first block selector RDn.

When erasing data from a memory cell, therefore, the voltagerelationship is such that the same floating voltage FL is applied to thesources S as the diffusion layers of the transfer transistors TR0 _(—) nto TRi_n. Consequently, leakage currents leak1 and leak2 shown in FIG. 1are not generated. The leakage current leak1 is a leakage currentbetween the diffusion layers, which oppose each other, of transfertransistors adjacent to each other in the BL-line direction(channel-length direction) in the same block selector. The leakagecurrent leak2 is a leakage current between the diffusion layers, whichobliquely oppose each other, of similar transfer transistors.

Second, the width (W2) between the diffusion layers of the first andsecond block selectors adjacent to each other in the word-line directionis made larger than the width (W1) between the diffusion layers in eachof the first and second block selectors adjacent to each other in theword-line direction (widths: W2>W1). In other words, the space (W2)between the diffusion layers of block selectors adjacent to each otherin the WL direction is made larger than the space (W1) between thediffusion layers in the WL direction in the same block selector. Forexample, the width (W2) between the diffusion layers S of the first andsecond block selectors RDn and RDn+3 adjacent to each other in theword-line direction is made larger than the width (W1) between thediffusion layers S in each of the first and second block selectors RDnand RDn+3 adjacent to each other in the word-line direction (widths:W2>W1).

As shown in FIG. 1, therefore, it is possible to reduce leakage currentsleak3 and leak4 generated between the first and second block selectorsRDn and RDn+3 adjacent to each other in the WL direction. The leakagecurrent leak3 is a leakage current generated between the diffusionlayers S, which oppose each other in the WL direction, of the first andsecond block selectors RDn and RDn+3 adjacent to each other in theword-line direction. The leakage current leak4 is a leakage currentgenerated between the diffusion layers S, which obliquely oppose eachother, of the first and second block selectors RDn and RDn+3.

The current amounts of the leakage currents leak3 and leak4 can be madenegligibly small by making the width W2 larger than the width W1.Accordingly, the arrangement shown in FIG. 1 can reduce the leakagecurrents leak3 and leak4.

Thus, the arrangement as described above is capable of reducing theleakage currents in the row decoder, and advantageous in preventingerase errors in memory cells.

Probably best embodiments of the present invention will be explainedbelow with reference to the accompanying drawing. Although a NAND flashmemory will be taken as an example in the following explanation, thepresent invention is not limited to this. Note that in this explanation,the same reference numerals denote the same parts throughout thedrawing.

First Embodiment 1. Arrangement Examples 1-1. Example of OverallArrangement

First, an example of the overall arrangement of a semiconductor memorydevice according to the first embodiment of the present invention willbe explained below with reference to FIG. 2. FIG. 2 is a block diagramshowing the example of the overall arrangement of the semiconductormemory device according to the first embodiment.

As shown in FIG. 2, a NAND flash memory according to this embodimentcomprises a memory cell array unit 12, bit line controller 13, word linecontroller 14, gate line controller 15, control signal generator 16,signal input terminal 17, data input/output buffer 18, and datainput/output terminal 19.

The memory cell array unit 12 comprises a memory cell array, rowdecoder, and page buffer (none of them is shown) as will be describedlater. The memory cell array includes a plurality of blocks ( . . . ,block n, block n+1, block n+2, . . . ) Each block comprises a memorycell unit in which the current paths of a plurality of memory celltransistors arranged in a matrix at the intersections of a plurality ofword lines and a plurality of bit lines are connected in series, and aselection transistor for selecting the memory cell unit.

The row decoder is positioned near the memory cell array, and applies apredetermined voltage to word lines in, e.g., a data erase operation.

The page buffer is positioned near the memory cell array, and has aplurality of sense amplifiers respectively connected to a plurality ofbit lines.

The bit line controller 13 reads out data from a memory cell transistorin the memory cell array unit 12 via a bit line, and detects the stateof a memory cell transistor in the memory cell array 12 via a bit line.Also, the bit line controller 13 applies a write control voltage to amemory cell in a memory cell array 11 via a bit line, thereby writingdata in the memory cell. The bit line controller 13 is connected to thememory cell array unit 12, data input/output buffer 18, and controlsignal generator 16.

The word line controller 14 selects a word line in the memory cell arrayunit 12, and applies a voltage necessary for read, write, or erase tothe selected word line.

The gate line controller 15 controls the gate voltage of a transfer gateline in the row decoder.

The control signal generator 16 is connected to the bit line controller13, word line controller 14, gate line controller 15, and datainput/output buffer 18, and controls these connected circuits. Thecontrol signal generator 16 is controlled by a control signal such as anALE (Address Latch Enable) signal input from an external host apparatusvia the signal input terminal 17.

The word line controller 14, bit line controller 13, gate linecontroller 15, and control signal generator 16 form a write circuit,read circuit, and erase circuit.

The signal input terminal 17 is connected to the external host apparatusor the like, and receives a control signal such as the ALE signaldescribed above.

The data input/output buffer 18 outputs memory cell transistorread/write data DT to the data input/output terminal 19.

The data input/output terminal 19 is connected to the host apparatus orthe like outside the NAND flash memory, and exchanges the read/writedata DT, addresses ADD, and commands CMD. The host apparatus is, e.g., amicrocomputer, and receives the data output from the data input/outputterminal 19. The host apparatus also outputs the various commands CMDfor controlling the operation of the NAND flash memory, the addressesADD, and data DT. Write data input from the host apparatus to the datainput/output terminal 19 is supplied to the bit line controller 13 viathe data input/output buffer 18. On the other hand, the commands CMD andaddresses ADD are supplied to the control signal generator 16.

1-2. Example of Arrangement of Memory Cell Array Unit

An example of the arrangement of the memory cell array unit 11 will beexplained below with reference to FIGS. 3 to 6.

As shown in FIGS. 3 to 6, the memory cell array unit 11 comprises amemory cell array 21, row decoders 22-1 and 22-2, and page buffers 23-1and 23-2.

The memory cell array 21 includes a plurality of blocks ( . . . , blockn, block n+1, block n+2, . . . ) Each block has a memory cell unit inwhich the current paths of a plurality of memory cell transistorsarranged in a matrix at the intersections of a plurality of word linesand a plurality of bit lines are connected in series, and a selectiontransistor for selecting the memory cell unit.

The row decoders 22-1 and 22-2 are arranged near the memory cell array21, and apply a predetermined voltage to word lines in, e.g., a dataerase operation.

The page buffers 23-1 and 23-2 are arranged near the memory cell array21, and includes a plurality of sense amplifiers (S/A) respectivelyconnected to a plurality of bit lines.

Examples of the layout of the row decoders and page buffers will beexplained below.

First, FIG. 3 shows the layout of the row decoders and page bufferaccording to this embodiment. As shown in FIG. 3, the row decoders 22-1and 22-2 are respectively arranged on the left and right sides of thememory cell array 21. The page buffer 23-1 is positioned above thememory cell array.

In the layout shown in FIG. 4, the row decoder 22-1 alone is positionedon the left side of the memory cell array 21, and the page buffer 23-1alone is positioned above the memory cell array.

In the layout shown in FIG. 5, the row decoder 22-1 alone is positionedon the left side of the memory cell array 21, and the page buffers 23-1and 23-2 are respectively arranged above and below the memory cellarray.

In the layout shown in FIG. 6, the row decoders 22-1 and 22-2 arerespectively arranged on the left and right sides of the memory cellarray 21, and the page buffers 23-1 and 23-2 are respectively arrangedabove and below the memory cell array.

Any of the layouts shown in FIGS. 3 to 6 can be selected as needed. Notethat as described above, this embodiment will be explained by taking thelayout shown in FIG. 3 as an example.

1-3. Example of Arrangement of Block

An example of the arrangement of the blocks forming the memory cellarray 21 will now be explained with reference to FIGS. 7 and 8.

First, FIG. 7 shows the layout of the blocks according to thisembodiment. FIG. 7 shows the structure of the memory cell array when therow decoders are arranged on the two sides as shown in FIGS. 3 and 6. Asshown in FIG. 7, a plurality of blocks ( . . . , block n, block n+1,block n+2, . . . ) are alternately connected two by two to the rowdecoders on the two sides. This arrangement can secure a wideinterconnection region for connecting the memory cell array 21 and rowdecoders 22.

FIG. 8 shows the structure of the memory cell array when the row decoderis positioned on one side as shown in FIGS. 4 and 5. In this layoutshown in FIG. 8, a plurality of blocks ( . . . , block n, block n+1,block n+2, . . . ) are arranged in the memory cell array 21 along thebit-line direction. This arrangement can reduce the cell area becausethe row decoder 22 is placed on only one side of the memory cell array21.

Either of the layouts shown in FIGS. 7 and 8 can be selected as needed.Note that as described above, this embodiment will be explained bytaking the layout shown in FIG. 7 as an example.

1-4. Examples of Arrangements of Memory Cell Array and Row Decoder

Examples of the arrangements of the memory cell array and row decoders22-1 and 22-2 according to this embodiment will be explained below withreference to FIG. 9.

In this embodiment as shown in FIG. 9, the row decoders 22-1 and 22-2are respectively arranged on the left and right sides of the memory cellarray 21.

The row decoders 22-1 and 22-2 are formed to correspond to a pluralityof blocks ( . . . , block n, block n+1, block n+2, . . . ) in the memorycell array 21, and comprise block selectors ( . . . , Row Dec n (to bereferred to as RDn hereinafter), Row Dec n+1, . . . ) arranged adjacentto each other in the word-line direction. For example, as enclosed withthe thick lines, the row decoder 22-2 includes two block selectors (RDnand RDn+3) corresponding to two blocks (block n and block n+3).

Also, block selectors ( . . . , RDn, RDn+4, . . . ) adjacent to eachother in the bit-line direction in the row decoders 22-1 and 22-2 sharea drain contact DC (Junction). For example, the block selectors RDn andRDn+4 adjacent to each other in the bit-line direction in the rowdecoder 22-2 share the drain contact DC (Junction).

1-5. Examples of Circuit Configurations of Block and Block Selector

Examples of the circuit configurations of the block and block selectorwill be explained below with reference to FIG. 10. The block (block n)and block selector (RDn) will be explained as examples. Data is erasedblock by block in the NAND flash memory. Therefore, the block is anerase unit.

As shown in FIG. 10, the block block n comprises a memory cell unit MUand selection transistors S1 and S2 for selecting the memory cell unitMU. In the memory cell unit MU, the current paths of a plurality ofmemory cell transistors MC0 to MC1 arranged in a matrix at theintersections of a plurality of bit lines BL0 to BLj and a plurality ofword lines WL0 to WLi are connected in series.

The current path of the selection transistor S1 has one end connected toone end of the current path of the memory cell unit MU, and the otherend connected to a source line CELSRC. The current path of the selectiontransistor S2 has one end connected to the other end of the current pathof the memory cell unit MU, and the other end connected to one of theplurality of bit lines BL0 to BLj. Although this embodiment uses the twoselection transistors, only one selection transistor may also be used aslong as the memory cell unit MU can be selected.

Each of the memory cell transistors MC0 to MC1 has a structure in whicha tunnel insulating film, floating electrode FG, inter-gate insulatingfilm, and control electrode CG are sequentially stacked on asemiconductor substrate. This embodiment will be explained by taking thecase where the floating electrode FG is a charge storage layer as anexample, but the present invention is not limited to this. That is, thepresent invention is similarly applicable to ametal-oxide-nitride-oxide-silicon (MONOS) type device using, e.g., asilicon nitride film (Si₃N₄ film) as a charge storage layer instead ofthe floating electrode, or a tantalum nitride-aluminumoxide-nitride-oxide-silicon (TANOS) type device using a controlelectrode made of a tantalum nitride film and a high-k insulating filmsuch as an alumina film (Al₂O₃ film) as a charge storage layer.

A page (PAGE) is formed for each of the word lines WL0 to WLi. Data readand write operations of the NAND flash memory are each performed at oncefor every page (PAGE). Accordingly, the page is a read unit and writeunit.

The word lines WL0 to WLi run in the word-line direction, and are eachconnected to the control electrodes CG of a plurality of memory celltransistors MC in the word-line direction. A select gate line SGS runsin the word-line direction, and is connected to the gate electrodes of aplurality of selection transistors S1 in the word-line direction. Aselect gate line SGD also runs in the word-line direction, and isconnected to the gate electrodes of a plurality of selection transistorsS2 in the word-line direction.

The bit lines BL0 to BLj run in the bit-line direction, and areconnected to sense amplifiers S/A in the page buffer, thereby readingout data from the memory cell transistors MC.

The block selector (RDn) comprises transfer transistors TGTS_n, TGTD_n,and TR0 _(—) n to TRi_n, a voltage converter 25, and an address decoder26.

The transfer transistors TGTS_n, TGTD_n, TR0 _(—) n to TRi_n arehigh-breakdown-voltage transistors having gates connected together to atransfer gate line TG. A block selection signal indicating whether toselect the block n is input to the transfer gate line TG The voltageconverter 25 and address decoder 26 generate the block selection signal.

The current path of the transfer transistor TGTS_n has one end connectedto the select gate SGS, and the other end SGS_i connected to an SGSdriver (not shown). Likewise, the current path of the transfertransistor TGTD_n has one end connected to the select gate SGD, and theother end SGD_i connected to an SGD driver (not shown).

The current paths of the transistor transistors TR0 _(—) n to TRi_n eachhave one end connected to a corresponding one of the word lines WL0 toWLi, and have the other ends CG0 _(—) i to CGi_i connected to a WLdriver (not shown).

1-6. Examples of Planar Arrangement and Sectional

Arrangement of Row Decoder

Examples of the planar arrangement and sectional arrangement of the rowdecoder will be explained below with reference to FIGS. 11 and 12. Therow decoder 22-2 on the right side will be explained as an example.

As shown in FIG. 11, the row decoder 22-2 comprises a plurality of blockselectors ( . . . , RDn, RDn+3, . . . ) each having a plurality oftransfer transistors (TR0 to TRi). The diffusion layer of the source Sas one end of the current path of each transfer transistor iselectrically connected to a corresponding one of a plurality of wordlines (WL0 to WL1). The plurality of block selectors ( . . . , RDn,RDn+3, . . . ) are formed to correspond to the plurality of blocks ( . .. , block n, block n+3, . . . ) Also, two block selectors (RDn andRDn+1) are arranged adjacent to each other in the word-line direction.

Furthermore, the diffusion layers (S) as the ends of the current pathsof the transfer transistors (TR0 to TR1) are formed to oppose each otherin the block selectors (RDn and RDn+1). For example, the diffusionlayers (S) of the transfer transistors (TR0 _(—) n to TRi_n) in theblock selector (RDn) are formed to oppose each other in the blockselector (RDn).

In addition, the width (W2) between the diffusion layers of the sourcesS of the block selectors (RDn and RDn+1) adjacent to each other in theword-line direction (channel-width direction) is made larger than thewidth (W1) between the diffusion layers of the sources S in each of theblock selectors (RDn and RDn+1) adjacent to each other in the word-linedirection (widths: W2>W1). For example, the width W2 between thediffusion layer of the source S of the transfer transistor TR0 _(—) n inthe block selector RDn and the diffusion layer of the source S of thetransfer transistor TR0 _(—) n+3 in the other block selector (RDn+1)adjacent to the block selector RDn in the word-line direction is madelarger than the width W1 between the diffusion layers of the sources Sof the transfer transistors TR0 _(—) n and TR1 _(—) n adjacent to eachother in the word-line direction in the same block selector (RDn)(widths: W2>W1).

The diffusion layer of a drain D as the other end of the current path ofeach transfer transistor is electrically connected to a word line driver(not shown). The gate electrodes ( . . . , TG_n, TG_n+3, TG_n+4, TG_n+7,. . . ) are each electrically connected to a transfer gate line.

FIG. 12 shows the sectional structure of the block selector RDn. FIG. 12is a sectional view taken along a line XII-XII in FIG. 11.

As shown in FIG. 12, transfer transistors TR0 _(—) n and TRi−1_(—) n ashigh-breakdown-voltage transistors are arranged to sandwich an elementisolation insulating film STI on a semiconductor substrate (P-well(P-sub)) 41. Each of the transfer transistors TR0 _(—) n and TRi−1_(—) ncomprises a gate insulating film 39 formed on the semiconductorsubstrate 41, a gate electrode TG_n formed on the gate insulating film39, and the source S (an n+ diffusion layer) and the drain D (an n+diffusion layer) formed apart from each other in the substrate 41 so asto sandwich the gate electrode TG_n.

An interlayer dielectric film 42 is formed to cover the transfertransistors TR0 _(—) n and TRi_n.

2. Data Erase Operation

A data erase operation of the nonvolatile semiconductor device of thisembodiment will be explained below with reference to FIGS. 13 to 19. Therow decoder 22-2 on the right side will be explained as an example. Inthis explanation, the block block n+3 is a selected block, and the blockblock n is an unselected block.

2-1. Selected Block

FIG. 13 shows the voltage relationship in the selected block block n+3and the block selector RDn+3 for selecting the block in the data eraseoperation.

In the selected block block n+3 as shown in FIG. 13, the transfer gateline TG is charged to an internal power supply voltage Vdd. In addition,the internal power supply voltage Vdd is applied to the other ends SGS_iand SGD_i of the current paths of the transfer transistors. A groundpower supply voltage of 0 V is applied to the other ends CG0 _(—) i toCGi_i of the transfer transistors.

After that, a well voltage CPWELL in the selected block block n+3 israised to an erase voltage of, e.g., about 20 V.

2-2. Unselected Block

FIG. 14 shows the voltage relationship in the unselected block block nand the block selector RDn for selecting the block in the data eraseoperation.

In the unselected block block n as shown in FIG. 14, the transfer gateline TG is charged to about a ground power supply voltage of 0 V. Theinternal power supply voltage Vdd is applied to the other ends SGS_i andSGD_i of the current paths of the transfer transistors, because the wordlines are the same as those of the selected block block n+3. A groundpower supply voltage of 0 V is applied to the other ends CG0 _(—) i toCGi_i of the current paths of the transfer transistors. The well voltageCPWELL is also raised to an erase voltage of about 20 V because the wellvoltage CPWELL is the same as that of the selected block block n+3.

In the unselected block block n, the transfer transistor is cut offbecause a ground power supply voltage of 0 V is applied to the transfergate line TG Accordingly, one end of the current path of the transfertransistor floats, and a floating voltage FL is applied to the wordlines WL0 to WLi.

2-3. Voltage Relationship in Row Decoder in Erase Operation

In this case, the voltage relationship in the row decoder 22-2 is asshown in FIGS. 15 and 16.

As shown in FIGS. 15 and 16, a ground power supply voltage of 0 V isapplied to the diffusion layer of the source S of the transfertransistor in the block selector RDn+3 corresponding to the selectedblock block n+3.

On the other hand, the floating voltage FL of about 20 V is applied tothe diffusion layer of the source S of the transfer transistor in theblock selector RDn corresponding to the unselected block block n.

As described previously, the diffusion layers (S) as the ends of thecurrent paths of the transfer transistors (TR) are formed to oppose eachother in the block selectors blocks RDn and RDn+3. In other words, thesources S of the diffusion layers connected to the word lines WL areformed to oppose each other in the same block selector. For example, thesources S of the diffusion layers of the transfer transistors TR0 _(—) nto TRi_n in the block selector RDn are formed to oppose each other inthe block selector RDn.

In the data erase operation, therefore, the voltage relationship is suchthat the same floating voltage FL is applied to the sources S as thediffusion layers of the transfer transistors TR0 _(—) n to TRi_n.Consequently, neither a leakage current leak1 nor a leakage currentleak2 is generated as shown in FIGS. 15 and 16. The leakage currentleak1 is a leakage current between the diffusion layers, which opposeeach other, of transfer transistors adjacent to each other in the BLdirection (channel-length direction). The leakage current leak2 is aleakage current between the diffusion layers, which obliquely opposeeach other, of similar transfer transistors.

In addition, the width (W2) between the diffusion layers S of the blockselectors RDn and RDn+3 adjacent to each other in the word-linedirection is made larger than the width (W1) between the diffusionlayers S in each of the block selectors RDn and RDn+3 adjacent to eachother in the word-line direction (widths: W2>W1). In other words, thespace (W2) between the diffusion layers of the block selectors RDn andRDn+3 adjacent to each other in the WL direction is made wider than thespace (W1) between the diffusion layers in the WL direction in the sameblock selector.

As shown in FIG. 15, therefore, it is possible to reduce leakagecurrents leak3 and leak4 generated between the first and second blockselectors RDn and RDn+3 adjacent to each other in the WL direction. Theleakage current leak3 is a leakage current generated between thediffusion layers S opposing each other in the WL direction in the blockselectors RDn and RDn+3. The leakage current leak4 is a leakage currentgenerated between the diffusion layers S obliquely opposing each otherin the block selectors RDn and RDn+3.

The current amounts of the leakage currents leak3 and leak4 can be madenegligibly small by making the width W2 larger than the width W1.Accordingly, the leakage currents leak3 and leak4 can be reduced.

Thus, the arrangement according to this embodiment is advantageous inthe ability to reduce the leakage currents in the row decoder 22-2.

2-4. Voltage Relationship in Memory Cell in Erase Operation

Accordingly, the operating waveforms of the well voltage CPWELL andword-line voltage in the data erase operation of the nonvolatilesemiconductor device according to this embodiment are as shown in FIG.17. Referring to FIG. 17, WL sel block indicates the word-line potentialof the selection block block n+3, and WL unsel block indicates theword-line potential of the unselected block block n.

As shown in FIG. 17, the word-line potential WL unsel block of theunselected block block n+3 of this embodiment can be set to floatwithout any leakage current. Even when the well voltage CPWELL is raisedto an erase voltage of about 20 V, therefore, the word-line potential WLunsel block can be raised to a predetermined erase voltage by couplingtogether with the well voltage CPWELL.

Consequently, the voltage relationship in the memory cell MC of theunselected block block n+3 in the data erase operation according to thisembodiment is as shown in FIG. 18. As shown in FIG. 18, an erase voltageof about 20 V is applied to both the control electrode CG of the memorycell MC and the well (p-well) in the unselected block block n+3. Thus,the voltage relationship in this embodiment is such that no potentialdifference is produced between the control electrode CG and well(p-well). Therefore, no electrons in the floating electrode FG areextracted to the well (p-well), so data can be held. This makes theembodiment advantageous in the ability to prevent erase errors andreduce defective bits.

On the other hand, the voltage relationship in the memory cell MC of theselected block n in the data erase operation according to thisembodiment is as shown in FIG. 19. As shown in FIG. 19, a ground powersupply voltage of about 0 V is applied to the control electrode CG ofthe memory cell MC in the selected block block n, and the well voltageCPWELL is raised to an erase voltage of about 20 V.

Accordingly, a predetermined potential difference of about 20 V isproduced between the control electrode CG and well (p-well), so data iserased by extracting electrons from the floating electrode FG into thewell (p-well).

3. Effects of This Embodiment

The semiconductor memory device according to this embodiment achieves atleast effects (1) and (2) below.

(1) The device is advantageous in preventing erase errors in memorycells because leakage currents in the row decoder can be reduced.

As described previously, the semiconductor memory device according tothis embodiment comprises the memory cell array 21 and row decoder 22-1.The memory cell array 21 comprises a plurality of blocks each includingthe memory cell unit MU, and the selection transistors S1 and S2 forselecting the memory cell unit. In the memory cell unit MU, the currentpaths of a plurality of memory cells arranged in a matrix at theintersections of a plurality of bit lines and a plurality of word linesare connected in series. The row decoder 22-1 comprises the first andsecond block selectors (RDn and RDn+3) arranged adjacent to each otherin the word-line direction. The first and second block selectors (RDnand RDn+3) each have a plurality of transfer transistors (TR), and areformed to correspond to a plurality of blocks. One end of the currentpath of each transfer transistor (TR) is electrically connected to acorresponding one of a plurality of word lines.

The diffusion layers (S) as the ends of the current paths of thetransfer transistors (TR) are formed to oppose each other in the firstand second block selectors.

The width (W2) between the diffusion layers of the first and secondblock selectors adjacent to each other in the word-line direction ismade larger than the width (W1) between the diffusion layers in each ofthe first and second block selectors adjacent to each other in theword-line direction (widths: W2>W1).

First, as described above, the diffusion layers (S) as the ends of thecurrent paths of the transfer transistors (TR) are formed to oppose eachother in the first and second block selectors (RDn and RDn+3). In otherwords, the sources S of the diffusion layers connected to the word lineWL are arranged to oppose each other in the same block selector. Forexample, the sources S as the diffusion layers of the transfertransistors TR0 _(—) n to TRi_n in the block selector RDn are formed tooppose each other in the block selector RDn.

In the data erase operation of the memory cell transistor MC, therefore,the voltage relationship is such that the same floating voltage FL isapplied to the sources S as the diffusion layers of the transfertransistors TR0 _(—) n to TRi_n. Consequently, neither the leakagecurrent leak1 nor the leakage current leak2 is generated as shown inFIGS. 15 and 16.

Second, the width (W2) between the diffusion layers of the first andsecond block selectors (RDn and RDn+3) adjacent to each other in theword-line direction is made larger than the width (W1) between thediffusion layers in each of the first and second block selectorsadjacent to each other in the word-line direction (widths: W2>W1). Inother words, the space (W2) between the diffusion layers of the blockselectors adjacent to each other in the WL direction is made wider thanthe space (W1) between the diffusion layers in the WL direction in thesame block selector. For example, the width (W2) between the diffusionlayers S of the first and second block selectors RDn and RDn+3 adjacentto each other in the word-line direction is made larger than the width(W1) between the diffusion layers S in each of the first and secondblock selectors RDn and RDn+3 adjacent to each other in the word-linedirection (widths: W2>W1).

As shown in FIG. 15, therefore, it is possible to reduce the leakagecurrents leak3 and leak4 generated between the first and second blockselectors RDn and RDn+3 adjacent to each other in the WL direction.

The current amounts of the leakage currents leak3 and leak4 can be madenegligibly small because the width W2 is made larger than the width W1.Accordingly, the arrangement shown in FIG. 15 can reduce the leakagecurrents leak3 and leak4.

Consequently, as shown in FIG. 17, the word-line potential WL sel blockof the selected block block n+3 of this embodiment can be set to floatwithout any leakage current. Even when the well voltage CPWELL is raisedto an erase voltage of about 20 V, therefore, the word-line potential WLunsel block can be raised to a predetermined erase voltage by couplingtogether with the well voltage CPWELL.

As shown in FIG. 18, therefore, an erase voltage of about 20 V isapplied to both the control electrode CG of the memory cell MC and thewell (p-well) in the unselected block block n+3 when erasing data. Thus,the voltage relationship in this embodiment is such that no potentialdifference is produced between the control electrode CG and well(p-well). Accordingly, no electrons in the floating electrode FG areextracted to the well (p-well), so data can be held. This makes thedevice advantageous in the ability to prevent erase errors and reducedefective bits.

Thus, the arrangement according to this embodiment is capable ofreducing the leakage currents in the row decoder, and advantageous inpreventing erase errors in memory cells.

(2) The device is advantageous in increasing the capacity and advancingmicropatterning.

As described above, the arrangement according to this embodiment iscapable of reducing the leakage currents in the row decoder, andadvantageous in preventing erase errors in memory cells.

Accordingly, while the distance between interconnections is shortened bythe progress of micropatterning resulting from the increase in capacity,even when the voltage relationship is such that a high erase voltage of,e.g., about 20 V is applied, it is possible to prevent leakage currentsand ensure a high breakdown voltage. This makes the device advantageousin increasing the capacity and advancing micropatterning.

Second Embodiment Example of Staggered Layout

A semiconductor memory device according to the second embodiment will beexplained below with reference to FIGS. 20 to 22. This embodiment isdirected to an example in which block selectors are staggered. In thisexplanation, a repetitive explanation of the same features as in thefirst embodiment described above will be omitted.

Example of Arrangement

As shown in FIGS. 20 and 21, this embodiment differs from the firstembodiment in that two block selectors in each of row decoders 22-1 and22-2 are staggered at, e.g., about a ½ pitch in the bit-line direction.For example, first and second block selectors (RDn and RDn+3) arestaggered at about a ½ pitch in the bit-line direction.

<Voltage Relationship in Data Erase>

Accordingly, the voltage relationship in the row decoder 22-2 accordingto this embodiment when erasing data is as shown in FIG. 22.

As shown in FIG. 22, a ground power supply voltage of 0 V is applied tothe diffusion layer of a source S of a transfer transistor in the blockselector RDn+3 corresponding to a selected block block n+3. On the otherhand, a floating voltage FL of about 20 V is applied to the diffusionlayer of the source S of a transfer transistor in the block selector RDncorresponding to an unselected block block n.

As described previously, the diffusion layers (S) as the ends of thecurrent paths of transfer transistors (TR) are formed to oppose eachother in the block selectors RDn and RDn+3.

In a data erase operation, therefore, the voltage relationship is suchthat the same floating voltage FL is applied to the sources S as thediffusion layers of transfer transistors TR0 _(—) n to TRi_n.Consequently, neither a leakage current leak1 nor a leakage currentleak2 is generated as shown in FIG. 22.

Furthermore, the width (W2) between the diffusion layers S of the blockselectors RDn and RDn+3 adjacent to each other in the word-linedirection is made larger than the width (W1) between the diffusionlayers S in each of the block selectors RDn and RDn+3 adjacent to eachother in the word-line direction (widths: W2>W1).

Additionally, in this embodiment, the block selectors RDn and RDn+3 arestaggered at about a ½ pitch in the bit-line direction.

As shown in FIG. 22, therefore, it is possible to further reduce leakagecurrents leak3 and leak4 generated between the first and second blockselectors RDn and RDn+3 adjacent to each other in the WL direction.

As described above, the semiconductor memory device according to thisembodiment achieves at least the same effects as effects (1) and (2)described earlier.

Additionally, in this embodiment, the two block selectors in each of therow decoders 22-1 and 22-2 are staggered at, e.g., about a ½ pitch inthe bit-line direction.

This makes the second embodiment advantageous in that, as shown in FIG.22, the leakage currents leak3 and leak4 obliquely generated can bereduced more than in the first embodiment during the data eraseoperation.

Comparative Example

For comparison with the semiconductor memory devices according to thefirst and second embodiments described above, a semiconductor memorydevice according to a comparative example will be explained below withreference to FIGS. 23 to 28.

Example of Arrangement

FIG. 23 shows an example of the arrangement of a memory cell array unitaccording to the comparative example. Also, FIG. 24 shows thearrangement of a row decoder (right side) 22-2 shown in FIG. 23.

As shown in FIG. 24, a plurality of block selectors ( . . . , RDn,RDn+3, RDn+4, . . . ) are arranged along the bit line.

For example, the block selectors RDn+3 and RDn+4 are laid out such thatdiffusion layers (S) of transfer gate transistors connected to wordlines WLn oppose each other.

<Voltage Relationship in Data Erase>

Accordingly, the voltage relationship according to the comparativeexample when erasing data is as shown in FIGS. 25 and 26. In thisexplanation, a block block n+4 is a selected block, and a block blockn+3 is an unselected block.

In this voltage relationship, two leakage currents leak1 and leak2described below are generated as major leakage currents by transfertransistors. That is, the leakage current leak1 is a leakage currentbetween the diffusion layers (S) of transfer transistors, which opposeeach other, of the block selectors (RDn+3 and RDn+4) adjacent to eachother in the bit-line direction (channel-length direction). The leakagecurrent leak2 is a leakage current between the diffusion layers (S) oftransfer transistors, which obliquely oppose each other, of the blockselectors (RDn+3 and RDn+4) adjacent to each other in the bit-linedirection. As shown in FIG. 26, therefore, the device is disadvantageousin that the leakage currents leak1 and leak2 are generated beyond anelement isolation insulating film STI.

Accordingly, the operating waveforms of a well voltage CPWELL andword-line voltage in the data erase operation of the semiconductormemory device according to this comparative example is as shown in FIG.27. Referring to FIG. 27, WL sel block indicates the word-line potentialof the selected block block n+4, and WL unsel block indicates theword-line potential of the unselected block block n+3.

As shown in FIG. 27, since the leakage currents are generated, theword-line potential WL unsel block of the unselected block block n+3 ofthis comparative example cannot be raised to a predetermined floatingvoltage (well voltage CPWELL=about 20 V), and remains lower than that.Even when the well voltage CPWELL is raised to an erase voltage of about20 V, therefore, the word-line potential WL unsel block cannot be raisedto a predetermined erase voltage by coupling together with the wellvoltage CPWELL.

Consequently, the voltage relationship in a memory cell MC of theunselected block block n+3 in the data erase operation according to thiscomparative example is as shown in FIG. 28. As shown in FIG. 28, avoltage applied to a control electrode CG of the memory cell MC in theunselected block block n+3 is lower than the predetermined erase voltage(e.g., about 20 V→about 15 V) owing to the leakage currents leak1 andleak2. Therefore, if, for example, the voltage of the control electrodeCG decreases from the erase voltage (about 20 V) to about 15 V, apotential difference of about 5 V is produced between the controlelectrode CG and a well (p-well). As a result, a weak erased state isproduced, and electrons in a floating electrode FG of a memory cell inwhich data is to be held are extracted into a substrate. This makes thecomparative example disadvantageous in that erase errors occur and thenumber of defective bits increases.

Additional advantages and modifications will readily occur to thoseskilled in the art. Therefore, the invention in its broader aspects isnot limited to the specific details and representative embodiments shownand described herein. Accordingly, various modifications may be madewithout departing from the spirit or scope of the general inventiveconcept as defined by the appended claims and their equivalents.

1. A semiconductor memory device comprising: a memory cell arrayincluding a plurality of blocks each including a memory cell unit inwhich current paths of a plurality of memory cells arranged in a matrixat intersections of a plurality of bit lines and a plurality of wordlines are connected in series, and a selection transistor which selectsthe memory cell unit; and a row decoder including a first block selectorand a second block selector each of which includes a plurality oftransfer transistors having current paths whose ends are electricallyconnected to the plurality of word lines, and which are formed tocorrespond to the plurality of blocks and arranged adjacent to eachother in a word-line direction, wherein diffusion layers as the ends ofthe current paths of the transfer transistors are formed to oppose eachother in the first block selector and the second block selector, and afloating voltage is applied to the diffusion layers of the first blockselector and a ground voltage is applied to the diffusion layers of thesecond block selector when data is erased from the memory cell.
 2. Thedevice according to claim 1, wherein when data is erased from the memorycell, a width between the diffusion layers of the first block selectorand the second block selector adjacent to each other in the word-linedirection is made larger than a width between the diffusion layers ineach of the first block selector and the second block selector adjacentto each other in the word-line direction.
 3. The device according toclaim 1, wherein leakage between the diffusion layers of the first blockselector is smaller than that between one of the diffusion layers of thefirst block selector and the diffusion layers of the second blockselector.
 4. The device according to claim 1, wherein when data iserased from the memory cell, a floating voltage raised to about an erasevoltage by coupling is applied to the diffusion layer at the end of thecurrent path of the transfer transistor in the first block selectorcorresponding to an unselected block, and a ground voltage is applied tothe diffusion layer at the end of the current path of the transfertransistor in the second block selector corresponding to a selectedblock.
 5. The device according to claim 1, wherein the row decoder isplaced on one side of the memory cell array.
 6. The device according toclaim 1, wherein the row decoder is placed on two sides of the memorycell array.
 7. The device according to claim 6, wherein the plurality ofblocks are alternately connected two by two to the row decoder.
 8. Thedevice according to claim 1, wherein each of the first block selectorand the second block selector includes a voltage converter which inputsa block selection signal to a gate of the transfer transistor.
 9. Asemiconductor memory device comprising: a memory cell array including aplurality of blocks each including a memory cell unit in which currentpaths of a plurality of memory cells arranged in a matrix atintersections of a plurality of bit lines and a plurality of word linesare connected in series, and a selection transistor which selects thememory cell unit; and a row decoder including a first block selector anda second block selector each of which includes a plurality of transfertransistors having current paths whose ends are electrically connectedto the plurality of word lines, and which are formed to correspond tothe plurality of blocks and arranged adjacent to each other in aword-line direction, wherein diffusion layers as the ends of the currentpaths of the transfer transistors are formed to oppose each other in thefirst block selector and the second block selector, a floating voltageis applied to the diffusion layers of the first block selector and aground voltage is applied to the diffusion layers of the second blockselector when data is erased from the memory cell, and the first blockselector and the second block selector are staggered by shifting pitchesin a bit-line direction.
 10. The device according to claim 9, whereinwhen data is erased from the memory cell, a width between the diffusionlayers of the first block selector and the second block selectoradjacent to each other in the word-line direction is made larger than awidth between the diffusion layers in each of the first block selectorand the second block selector adjacent to each other in the word-linedirection.
 11. The device according to claim 9, wherein leakage betweenthe diffusion layers of the first block selector is smaller than that ofbetween one of the diffusion layers of the first block selector and thediffusion layers of the second block selector.
 12. The device accordingto claim 9, wherein when data is erased from the memory cell, a floatingvoltage raised to about an erase voltage by coupling is applied to thediffusion layer at the end of the current path of the transfertransistor in the first block selector corresponding to an unselectedblock, and a ground voltage is applied to the diffusion layer at the endof the current path of the transfer transistor in the second blockselector corresponding to a selected block.
 13. The device according toclaim 9, wherein the row decoder is placed on one side of the memorycell array.
 14. The device according to claim 9, wherein the row decoderis placed on two sides of the memory cell array.
 15. The deviceaccording to claim 14, wherein the plurality of blocks are alternatelyconnected two by two to the row decoder.
 16. The device according toclaim 9, wherein each of the first block selector and the second blockselector further includes an address decoder which decodes an inputaddress, and outputs the decoded address to the voltage converter.